SCT040TO65G3

Part Number
SCT040TO65G3
Manufacturer STMicroelectronics
Other part numbers
Description SILICON CARBIDE POWER MOSFET 650
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drain to Source Voltage (Vdss) 650 V
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 288W (Tc)
Package / Case 8-PowerSFN
Supplier Device Package TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Vgs (Max) +18V, -5V
Gate Charge (Qg) (Max) @ Vgs 42.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 853 pF @ 400 V

Goods in stock:1641

Can be shipped immediately
quantity unit price price
1 USD $10.58 USD $10.58
Total Amount: USD $10.58

Cut Tape (CT)

quantity unit price price
1 $10.58 $10.58
10 $7.27 $72.7
100 $5.89 $589