SCT040HU65G3AG

Part Number
SCT040HU65G3AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 221W (Tc)
Technology SiCFET (Silicon Carbide)
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Supplier Device Package HU3PAK
Rds On (Max) @ Id, Vgs 55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 400 V

Goods in stock:2120

Can be shipped immediately
quantity unit price price
1 USD $15.44 USD $15.44
Total Amount: USD $15.44

Cut Tape (CT)

quantity unit price price
1 $15.44 $15.44
10 $10.84 $108.4
100 $9.65 $965