SCT027W65G3-4AG
| Part Number |
SCT027W65G3-4AG
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | TO247-4 |
| Specification document |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Power Dissipation (Max) | 313W (Tc) | |
| Package / Case | TO-247-4 | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | TO-247-4 | |
| Vgs (Max) | +22V, -10V | |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA | |
| Rds On (Max) @ Id, Vgs | 39.3mOhm @ 30A, 18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1229 pF @ 400 V |
Goods in stock:1600
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 600 | $10.56 | $6336 |
