SCT027H65G3AG
| Part Number |
SCT027H65G3AG
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | AUTOMOTIVE-GRADE SILICON CARBIDE |
| Specification document | Datasheet |
Product attributes
| Part Status | Active | |
|---|---|---|
| Mounting Type | Surface Mount | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Power Dissipation (Max) | 300W (Tc) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | H2PAK-7 | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Vgs (Max) | +18V, -5V | |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA | |
| Rds On (Max) @ Id, Vgs | 39.3mOhm @ 30A, 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 48.6 nC @ 18 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1277 pF @ 400 V |
Goods in stock:2560
Can be shipped immediately
Cut Tape (CT)
| quantity | unit price | price |
|---|---|---|
| 1 | $16.75 | $16.75 |
| 10 | $12.17 | $121.7 |
| 100 | $11.4 | $1140 |
