SCT025W120G3AG

Part Number
SCT025W120G3AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Technology SiCFET (Silicon Carbide)
Supplier Device Package HiP247™
Power Dissipation (Max) 388W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V

Goods in stock:1670

Can be shipped immediately
quantity unit price price
1 USD $23.18 USD $23.18
Total Amount: USD $23.18

Tube

quantity unit price price
1 $23.18 $23.18
30 $17.52 $525.6
120 $16.46 $1975.2