SCT025H120G3AG

Part Number
SCT025H120G3AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 375W (Tc)
Technology SiCFET (Silicon Carbide)
Supplier Device Package H2PAK-7
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V

Goods in stock:2577

Can be shipped immediately
quantity unit price price
1 USD $18.88 USD $18.88
Total Amount: USD $18.88

Cut Tape (CT)

quantity unit price price
1 $18.88 $18.88
10 $13.39 $133.9
100 $12.5 $1250