SCT020W120G3-4AG

Part Number
SCT020W120G3-4AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Drain to Source Voltage (Vdss) 1200 V
Package / Case TO-247-4
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +18V, -5V
Vgs(th) (Max) @ Id 4.2V @ 2.3mA
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 18 V
Rds On (Max) @ Id, Vgs 28mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds 3465 pF @ 800 V

Goods in stock:2168

Can be shipped immediately
quantity unit price price
1 USD $27.30 USD $27.30
Total Amount: USD $27.30

Tube

quantity unit price price
1 $27.3 $27.3
30 $20.29 $608.7
120 $19.32 $2318.4