SCT020HU120G3AG

Part Number
SCT020HU120G3AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 555W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Supplier Device Package HU3PAK
Vgs (Max) +18V, -5V
Vgs(th) (Max) @ Id 4.2V @ 2.3mA
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 18 V
Rds On (Max) @ Id, Vgs 28mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds 3465 pF @ 800 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1 USD $24.19 USD $24.19
Total Amount: USD $24.19

Cut Tape (CT)

quantity unit price price
1 $24.19 $24.19
10 $18.17 $181.7
100 $17.17 $1717