SCT019HU120G3AG

Part Number
SCT019HU120G3AG
Manufacturer STMicroelectronics
Other part numbers
Description SIC MOSFET
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max) 500W (Tc)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Technology SiC (Silicon Carbide Junction Transistor)
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Supplier Device Package HU3PAK
Vgs(th) (Max) @ Id 4.2V @ 10mA
Rds On (Max) @ Id, Vgs 26mOhm @ 40A, 18V
Gate Charge (Qg) (Max) @ Vgs 111.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 2789 pF @ 800 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
600 USD $13.96 USD $8,376.00
Total Amount: USD $8,376.00

Bulk

quantity unit price price
600 $13.96 $8376