SCT012W90G3-4AG

Part Number
SCT012W90G3-4AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Power Dissipation (Max) 625W (Tc)
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +18V, -5V
Vgs(th) (Max) @ Id 4.2V @ 10mA
Rds On (Max) @ Id, Vgs 15.8mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs 138 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 3880 pF @ 400 V

Goods in stock:1700

Can be shipped immediately
quantity unit price price
1 USD $27.41 USD $27.41
Total Amount: USD $27.41

Tube

quantity unit price price
1 $27.41 $27.41
30 $20.35 $610.5
120 $19.33 $2319.6