IRF640

Part Number
IRF640
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 200V 18A TO220AB
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package TO-220
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V

Goods in stock:1600

Can be shipped immediately