IRF630FP

Part Number
IRF630FP
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 200V 9A TO220FP
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Operating Temperature -65°C ~ 150°C (TJ)
Package / Case TO-220-3 Full Pack
Power Dissipation (Max) 30W (Tc)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Supplier Device Package TO-220FP

Goods in stock:1600

Can be shipped immediately