IRF630

Part Number
IRF630
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 200V 9A TO220AB
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Package / Case TO-220-3
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Operating Temperature -65°C ~ 150°C (TJ)
Supplier Device Package TO-220
Power Dissipation (Max) 75W (Tc)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V

Goods in stock:12713

Can be shipped immediately
quantity unit price price
1 USD $1.80 USD $1.80
Total Amount: USD $1.80

Tube

quantity unit price price
1 $1.8 $1.8
50 $0.82 $41
100 $0.81 $81
500 $0.7 $350
1000 $0.65 $650