CSD25301W1015
| Part Number |
CSD25301W1015
|
|---|---|
| Manufacturer | Texas Instruments |
| Other part numbers | |
| Description | MOSFET P-CH 20V 2.2A 6DSBGA |
| Specification document | Datasheet |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| FET Type | P-Channel | |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Vgs (Max) | ±8V | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V | |
| Package / Case | 6-UFBGA, DSBGA | |
| Supplier Device Package | 6-DSBGA (1x1.5) | |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 4.5 V | |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 1A, 4.5V |
Goods in stock:1600
Can be shipped immediately
