SCT070H120G3-7
SCT070H120G3-7 is a STMicroelectronics electronic component in Single FETs, MOSFETs. Specifications: SILICON CARBIDE POWER MOSFET 120. Purchasing and R&D teams can check this part
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Apex-Chip Electronics Co., Ltd. supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 223W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | H2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Vgs (Max) | +18V, -5V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 37.0 |
| Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs | 18.0 |
| Input Capacitance (Ciss) (Max) @ Vds | 900.0 |
| Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds | 850.0 |