SCT040W65G3-4

SCT040W65G3-4 is a STMicroelectronics electronic component in Single FETs, MOSFETs. Specifications: SILICON CARBIDE POWER MOSFET 650. Purchasing and R&D teams can check this part n

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Part Number:
SCT040W65G3-4
Manufacturer:
STMicroelectronics
Other Part Numbers:
-
Description:
SILICON CARBIDE POWER MOSFET 650
Datasheet:
PDF

Product Attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 240W (Tc)
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Vgs (Max) +18V, -5V
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 400 V