SCT027H65G3AG

SCT027H65G3AG is a STMicroelectronics electronic component in Single FETs, MOSFETs. Specifications: AUTOMOTIVE-GRADE SILICON CARBIDE. Purchasing and R&D teams can check this part n

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Part Number:
SCT027H65G3AG
Manufacturer:
STMicroelectronics
Other Part Numbers:
-
Description:
AUTOMOTIVE-GRADE SILICON CARBIDE
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max) 300W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Technology SiCFET (Silicon Carbide)
Supplier Device Package H2PAK-7
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +18V, -5V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Rds On (Max) @ Id, Vgs 39.3mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs 48.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 1277 pF @ 400 V