SCT016H120G3AG

SCT016H120G3AG is a STMicroelectronics electronic component in Single FETs, MOSFETs. Specifications: AUTOMOTIVE-GRADE SILICON CARBIDE. Purchasing and R&D teams can check this part

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Part Number:
SCT016H120G3AG
Manufacturer:
STMicroelectronics
Other Part Numbers:
-
Description:
AUTOMOTIVE-GRADE SILICON CARBIDE
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drain to Source Voltage (Vdss) 1200 V
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 112A (Tc)
Power Dissipation (Max) 652W (Tc)
Supplier Device Package H2PAK-7
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 3623 pF @ 800 V