IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1 is a Infineon Technologies electronic component in FET, MOSFET Arrays. Specifications: MOSFET 2N-CH 100V 20A 8TDSON. Purchasing and R&D teams can check this part

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Part Number:
IPG20N10S4L22ATMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET 2N-CH 100V 20A 8TDSON
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Package / Case 8-PowerVDFN
Drain to Source Voltage (Vdss) 100V
Rds On (Max) @ Id, Vgs 22mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C 20A
Supplier Device Package PG-TDSON-8-4
Power - Max 60W
Vgs(th) (Max) @ Id 2.1V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V