IPD70N12S311ATMA2

IPD70N12S311ATMA2 is a Infineon Technologies electronic component in Single FETs, MOSFETs. Specifications: MOSFET_(120V 300V). Purchasing and R&D teams can check this part number a

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Part Number:
IPD70N12S311ATMA2
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET_(120V 300V)
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Power Dissipation (Max) 125W (Tc)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Supplier Device Package PG-TO252-3-11
Vgs(th) (Max) @ Id 4V @ 83µA
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V
Rds On (Max) @ Id, Vgs 11.1mOhm @ 70A, 10V