IMZA75R040M1HXKSA1

IMZA75R040M1HXKSA1 is a Infineon Technologies electronic component in Single FETs, MOSFETs. Specifications: SILICON CARBIDE MOSFET. Purchasing and R&D teams can check this part num

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Part Number:
IMZA75R040M1HXKSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
SILICON CARBIDE MOSFET
Datasheet:
PDF

Product Attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Power Dissipation (Max) 185W (Tc)
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Supplier Device Package PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
Vgs (Max) +23V, -5V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 18 V
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 44A (Tj)
Rds On (Max) @ Id, Vgs 37mOhm @ 16.6A, 20V
Vgs(th) (Max) @ Id 5.6V @ 6mA
Input Capacitance (Ciss) (Max) @ Vds 1135 pF @ 500 V