IMZA120R022M2HXKSA1

IMZA120R022M2HXKSA1 is a Infineon Technologies electronic component in Single FETs, MOSFETs. Specifications: IMZA120R022M2HXKSA1. Purchasing and R&D teams can check this part numbe

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Part Number:
IMZA120R022M2HXKSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
IMZA120R022M2HXKSA1
Datasheet:
PDF

Product Attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Package / Case TO-247-4
Power Dissipation (Max) 329W (Tc)
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Supplier Device Package PG-TO247-4-8
Vgs(th) (Max) @ Id 5.1V @ 10.1mA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 800 V
Rds On (Max) @ Id, Vgs 29mOhm @ 32A, 18V