IMLT65R050M2HXTMA1

IMLT65R050M2HXTMA1 is a Infineon Technologies electronic component in Single FETs, MOSFETs. Specifications: SICFET N-CH 650V 47A HDSOP-16. Purchasing and R&D teams can check this p

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Part Number:
IMLT65R050M2HXTMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
SICFET N-CH 650V 47A HDSOP-16
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Power Dissipation (Max) 227W (Tc)
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs (Max) +23V, -7V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 18 V
Package / Case 16-PowerSOP Module
Vgs(th) (Max) @ Id 5.6V @ 3.7mA
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 400 V
Rds On (Max) @ Id, Vgs 62mOhm @ 18.2A, 18V
Supplier Device Package PG-HDSOP-16-6