H5N2519P-E
Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | 150°C |
| Drain to Source Voltage (Vdss) | 250 V |
| Package / Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Vgs (Max) | ±30V |
| Supplier Device Package | TO-3P |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 65A |
| Power Dissipation (Max) | 150W |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 32.5A, 10V |