H5N2510DSTL-E
H5N2510DSTL-E is a Renesas Electronics Corporation electronic component in Single FETs, MOSFETs. Specifications: NCH POWER MOSFET 250V 5A 890MOHM. Purchasing and R&D teams can chec
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Apex-Chip Electronics Co., Ltd. supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Part Status | Last Time Buy |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | 150°C |
| Drain to Source Voltage (Vdss) | 250 V |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Power Dissipation (Max) | 25W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 15.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
| Supplier Device Package | DPAK-3 |
| Rds On (Max) @ Id, Vgs | 970mOhm @ 2.5A, 10V |