H5N2005DSTL-E

Part Number:
H5N2005DSTL-E
Other Part Numbers:
-
Description:
NCH POWER MOSFET 200V 6A 650MOHM
Datasheet:
-

Product Attributes

Part Status Last Time Buy
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Drain to Source Voltage (Vdss) 200 V
Operating Temperature 150°C
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 4.5V @ 1mA
Vgs (Max) ±30V
Power Dissipation (Max) 25W (Tc)
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
Supplier Device Package DPAK-3
Rds On (Max) @ Id, Vgs 650mOhm @ 3A, 10V