FF4MR12W2M1HB70BPSA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power - Max | - |
| Configuration | 2 N-Channel (Half Bridge) |
| Technology | Silicon Carbide (SiC) |
| Current - Continuous Drain (Id) @ 25°C | 200A |
| Vgs(th) (Max) @ Id | 5.15V @ 80mA |
| FET Feature | Silicon Carbide (SiC) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 594nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 17600pF @ 800V |