F435MR07W1D7S8B11ABPSA1

F435MR07W1D7S8B11ABPSA1 is a Infineon Technologies electronic component in FET, MOSFET Arrays. Specifications: MOSFET 4N-CH 650V 35A MODULE. Purchasing and R&D teams can check this

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Part Number:
F435MR07W1D7S8B11ABPSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET 4N-CH 650V 35A MODULE
Datasheet:
-

Product Attributes

Part Status Active
Mounting Type Chassis Mount
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Package / Case Module
Operating Temperature -40°C ~ 150°C (TJ)
Power - Max -
Supplier Device Package Module
Configuration 4 N-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C 35A
Drain to Source Voltage (Vdss) 650V
Rds On (Max) @ Id, Vgs 39.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4.45V @ 1.74mA
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 400V