F417MR12W1M1HB76BPSA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 45A |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 62.5A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 6050pF @ 800V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.15V @ 20mA |