BSG0810NDIATMA1
BSG0810NDIATMA1 is a Infineon Technologies electronic component in FET, MOSFET Arrays. Specifications: MOSFET 2N-CH 25V 19A/39A TISON8. Purchasing and R&D teams can check this part
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Apex-Chip Electronics Co., Ltd. supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 25V |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Package / Case | 8-PowerTDFN |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Supplier Device Package | PG-TISON-8 |
| Current - Continuous Drain (Id) @ 25°C | 19A, 39A |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V |